p-channel 60 v (d-s) mosfet SUD50P06-15 features ? trenchfet ? power mosfet ? material categorization: for definitions of compliance please see applications ? load switch notes: a. duty cycle ? 1 %. b. when mounted on 1" square pcb (fr-4 material). c. see soa curve for voltage derating. d. package limited. product summary v ds (v) r ds(on) ( ? )i d (a) - 60 0.015 at v gs = - 10 v - 50 d 0.020 at v gs = - 4.5 v - 50 d to-252 s g d top view drain connected to tab ordering information SUD50P06-15-ge3 (lead (pb)-free and halogen-free) SUD50P06-15-t4-ge3 (lead (pb)-free and halogen-free) s g d p-channel mosfet absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 60 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d - 50 d a t c = 125 c - 27.5 pulsed drain current i dm - 80 avalanche current i as - 50 single pulse avalanche energy a l = 0.1 mh e as 125 mj power dissipation t c = 25 c p d 113 c w t a = 25 c 2.5 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient b t ? 10 s r thja 15 18 c/w steady state 40 50 junction-to-case r thjc 0.82 1.1 www.freescale.net.cn 1 / 7 vishay siliconix SUD50P06-15 document number: 68940 s12-2439 rev. c, 15-oct-12 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.comm p-channel 60 v (d-s) mosfet features ? trenchfet ? power mosfet ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? load switch notes: a. duty cycle d 1 %. b. when mounted on 1" square pcb (fr-4 material). c. see soa curve for voltage derating. d. package limited. product summary v ds (v) r ds(on) ( : )i d (a) - 60 0.015 at v gs = - 10 v - 50 d 0.020 at v gs = - 4.5 v - 50 d to-252 s g d top view drain connected to tab ordering information SUD50P06-15-ge3 (lead (pb)-free and halogen-free) SUD50P06-15-t4-ge3 (lead (pb)-free and halogen-free) s g d p-channel mosfet absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 60 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d - 50 d a t c = 125 c - 27.5 pulsed drain current i dm - 80 avalanche current i as - 50 single pulse avalanche energy a l = 0.1 mh e as 125 mj power dissipation t c = 25 c p d 113 c w t a = 25 c 2.5 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit junction-to-ambient b t d 10 s r thja 15 18 c/w steady state 40 50 junction-to-case r thjc 0.82 1.1
notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 60 v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 60 v, v gs = 0 v - 1 a v ds = - 60 v, v gs = 0 v, t j = 125 c - 50 v ds = - 60 v, v gs = 0 v, t j = 150 c - 100 on-state drain current a i d(on) v ds = - ? 5 v, v gs = - 10 v - 50 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 17 a 0.012 0.015 ? v gs = - 10 v, i d = - 50 a, t j = 125 c 0.025 v gs = - 10 v, i d = - 50 a, t j = 150 c 0.028 v gs = - 4.5 v, i d = - 14 a 0.020 forward transconductance a g fs v ds = - 15 v, i d = - 17 a 61 s dynamic b input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1 mhz 4950 pf output capacitance c oss 480 reverse transfer capacitance c rss 405 total gate charge c q g v ds = - 30 v, v gs = - 10 v, i d = - 50 a 110 165 nc gate-source charge c q gs 19 gate-drain charge c q gd 28 tu r n - o n d e l ay t i m e c t d(on) v dd = - 30 v, r l = 0.6 ? i d ? - 50 a, v gen = - 10 v, r g = 6 ? 15 23 ns rise time c t r 70 105 turn-off delay time c t d(off) 175 260 fall time c t f 175 260 source-drain diode ratings and characteristics t c = 25 c b continuous current i s - 50 a pulsed current i sm - 80 forward voltage a v sd i f = - 50 a, v gs = 0 v - 1 - 1.6 v reverse recovery time t rr i f = - 50 a, di/dt = 100 a/s 45 70 ns p-channel 60 v (d-s) mosfet SUD50P06-15 www.freescale.net.cn 2 / 7 www.vishay.com 2 document number: 68940 s12-2439 rev. c, 15-oct-12 vishay siliconix SUD50P06-15 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.comm notes: a. pulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 60 v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 60 v, v gs = 0 v - 1 a v ds = - 60 v, v gs = 0 v, t j = 125 c - 50 v ds = - 60 v, v gs = 0 v, t j = 150 c - 100 on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v - 50 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 17 a 0.012 0.015 : v gs = - 10 v, i d = - 50 a, t j = 125 c 0.025 v gs = - 10 v, i d = - 50 a, t j = 150 c 0.028 v gs = - 4.5 v, i d = - 14 a 0.020 forward transconductance a g fs v ds = - 15 v, i d = - 17 a 61 s dynamic b input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1 mhz 4950 pf output capacitance c oss 480 reverse transfer capacitance c rss 405 total gate charge c q g v ds = - 30 v, v gs = - 10 v, i d = - 50 a 110 165 nc gate-source charge c q gs 19 gate-drain charge c q gd 28 tu r n - o n d e l ay t i m e c t d(on) v dd = - 30 v, r l = 0.6 : i d # - 50 a, v gen = - 10 v, r g = 6 : 15 23 ns rise time c t r 70 105 turn-off delay time c t d(off) 175 260 fall time c t f 175 260 source-drain diode ratings and characteristics t c = 25 c b continuous current i s - 50 a pulsed current i sm - 80 forward voltage a v sd i f = - 50 a, v gs = 0 v - 1 - 1.6 v reverse recovery time t rr i f = - 50 a, di/dt = 100 a/s 45 70 ns
typical characteristics (25 c, unless otherwise noted) output characteristics transconductance capacitance v ds - drain-to-source voltage (v) - drain current (a) i d 3 v 0 10 20 30 40 50 60 70 80 012345 v gs = 10 thru 4 v 0 20 40 60 80 100 0 102030405060 v gs - gate-to-source voltage (v) - transconductance (s) g fs t c = - 55 c 25 c 125 c 0 1000 2000 3000 4000 5000 6000 7000 8000 0 102030405060 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs - gate-to-source voltage (v) - drain current (a) i d 25 c - 55 c t c = 125 c 0.000 0.005 0.010 0.015 0.020 0.025 0 1020304050607080 - on-resistance ( ) i d - drain current (a) r ds(on) v gs = 10 v v gs = 4.5 v 0 2 4 6 8 10 0 20 40 60 80 100 120 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 30 v i d = 50 a p-channel 60 v (d-s) mosfet SUD50P06-15 www.freescale.net.cn 3 / 7 document number: 68940 s12-2439 rev. c, 15-oct-12 www.vishay.com 3 vishay siliconix SUD50P06-15 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.comm typical characteristics (25 c, unless otherwise noted) output characteristics transconductance capacitance v ds - drain-to-source voltage (v) - drain current (a) i d 3 v 0 10 20 30 40 50 60 70 80 012345 v gs = 10 thru 4 v 0 20 40 60 80 100 0 102030405060 v gs - gate-to-source voltage (v) - transconductance (s) g fs t c = - 55 c 25 c 125 c 0 1000 2000 3000 4000 5000 6000 7000 8000 0 102030405060 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge 0 10 20 30 40 50 60 70 80 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs - gate-to-source voltage (v) - drain current (a) i d 25 c - 55 c t c = 125 c 0.000 0.005 0.010 0.015 0.020 0.025 0 1020304050607080 - on-resistance ( ) i d - drain current (a) r ds(on) v gs = 10 v v gs = 4.5 v 0 2 4 6 8 10 0 20 40 60 80 100 120 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 30 v i d = 50 a
typical characteristics thermal ratings (25 c, unless otherwise noted) on-resistance vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (normalized) - on-resistance t j - junction temperature ( c) r ds(on) v gs = 10 v i d = 17 a - 50 - 25 0 25 50 75 100 125 150 source-drain diode forward voltage 0.0 0.3 0.6 0.9 1.2 1.5 v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 t j = 25 c t j = 150 c drain current vs. case temperature t c - case temperature (c) - drain current (a) i d 0 10 20 30 40 50 60 0 25 50 75 100 125 150 safe operating area 1 10 100 0.1 1 10 100 - drain current (a) i d t c = 25 c single pulse r ds(on) * limited by p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 p(t) = 1 p(t) = 0.1 bvdss limited v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified normalized thermal transient impedance, junction-to-case square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 normalized eff ective transient thermal impedance 1 0.2 0.1 0.05 duty cycle = 0.5 single pulse 0.02 p-channel 60 v (d-s) mosfet SUD50P06-15 www.freescale.net.cn 4 / 7 www.vishay.com 4 document number: 68940 s12-2439 rev. c, 15-oct-12 vishay siliconix SUD50P06-15 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.comm typical characteristics thermal ratings (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68940 . on-resistance vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 (normalized) - on-resistance t j - junction temperature ( c) r ds(on) v gs = 10 v i d = 17 a - 50 - 25 0 25 50 75 100 125 150 source-drain diode forward voltage 0.0 0.3 0.6 0.9 1.2 1.5 v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 t j = 25 c t j = 150 c drain current vs. case temperature t c - case temperature (c) - drain current (a) i d 0 10 20 30 40 50 60 0 25 50 75 100 125 150 safe operating area 1 10 100 0.1 1 10 100 - drain current (a) i d t c = 25 c single pulse r ds(on) * limited by p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 p(t) = 1 p(t) = 0.1 bvdss limited v ds - drain-to-source voltage (v) *v gs > minimum v gs at which r ds(on) is specified normalized thermal transient impedance, junction-to-case square wave pulse duration (s) 2 1 0.1 0.01 10 -4 10 -3 10 -2 10 -1 normalized eff ective transient thermal impedance 1 0.2 0.1 0.05 duty cycle = 0.5 single pulse 0.02
to-252aa case outline note ? dimension l3 is for reference only. l2 d l1 l3 b b1 e1 e1 d1 a1 c a2 gage plane height (0.5 mm) e b2 e c1 a l h millimeters inches dim. min. max. min. max. a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 a2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.10 4.45 0.161 0.175 e 6.48 6.73 0.255 0.265 e1 4.49 5.50 0.177 0.217 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.65 10.41 0.380 0.410 l 1.40 1.78 0.055 0.070 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.040 0.060 ecn: t11-0110-rev. l, 18-apr-11 dwg: 5347 p-channel 60 v (d-s) mosfet SUD50P06-15 www.freescale.net.cn 5 / 7 document number: 71197 www.vishay.com 18-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package information vishay siliconix
recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index p-channel 60 v (d-s) mosfet SUD50P06-15 www.freescale.net.cn 6 / 7 application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
p-channel 60 v (d-s) mosfet SUD50P06-15 www.freescale.net.cn 7 / 7 disclaimer material category policy all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. freestyle intertechnology, inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, ?freestyle?), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on freestyle?s knowledge of typical requirements that are often placed on freestyle products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customer?s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customer?s technical experts. product specifications do not expand or otherwise modify freestyle?s terms and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay freestyle intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the european parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - 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recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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